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Phototransistors
PNZ102 (PN102)
Silicon planar type
4.60.15
Unit: mm
Glass lens
For optical control systems Features
* High sensitivity * Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs * Low dark current: ICEO = 5 nA (typ.) * Fast response: tr , tf = 3 s (typ.) * Base pin for easy circuit design * TO-18 standard type package
6.30.3 12.7 min.
3-0.450.05
2.540.25
1. 0
0. 2
15
3 45
Absolute Maximum Ratings Ta = 25C
Parameter Collector-emitter voltage (Base open) Collector-base voltage (Emitter open) Emitter-collector voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Rating 30 40 5 5 50 150 -25 to +85 -30 to +100 Unit V V V V mA mW C C
1.
0
0.
3 2 1
5.75 max.
1: Emitter 2: Base 3: Collector MTGLR103-001 Package
Note) *: The rate of electric power reduction is 1.5 mW/C above Ta = 25C.
Electrical-Optical Characteristics Ta = 25C 3C
Parameter Photocurrent *1 Dark current Peak emission wavelength Half-power angle Rise time *2 Fall time *2 Collector-emitter saturation voltage *1 Symbol ICE(L) ICEO p tr tf VCE(sat) ICE(L) = 1 mA, L = 500 lx VCE = 10 V VCE = 10 V The angle from which photocurrent becomes 50% VCC = 10 V, ICE(L) = 5 mA, RL = 100 Conditions VCE = 10 V, L = 100 lx Min 1.5 Typ 3.5 5 800 10 3 3 0.2 0.4 300 Max Unit mA nA nm s s V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit
Sig. in VCC (Input pulse) Sig. out RL (Output pulse) tr tf 90% 10% tr: Rise time tf: Fall time
50
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004 SHE00005BED
1
PNZ102
PC Ta
200 20
IC VCE
30 A 25 A 20 Ta = 25C 16 1 000 lx
ICE(L) VCE
500 lx Ta = 25C T = 2 856 K
Collector power dissipation PC (mW)
160
16
Collector current IC (mA)
20 A 12 15 A PC = 150 mW 8 10 A
Photocurrent ICE(L) (mA)
400 lx 300 lx 12 PC = 150 mW 200 lx 8 150 lx
120
80
40
4
IB = 5 A
4
100 lx L = 50 lx
0 -20
0
20
40
60
80
100
0
0
10
20
30
0
1
10
20
30
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector-emitter voltage VCE (V)
ICE(L) L
102 VCE = 10 V Ta = 25C T = 2 856 K 103 VCE = 10 V
ICEO Ta
102
ICE(L) Ta
VCE = 10 V T = 2 856 K
Photocurrent ICE(L) (mA)
Photocurrent ICE(L) (mA)
Dark current ICEO (nA)
10
102
L = 500 lx 10 200 lx 100 lx
1
10
10-1
1
10-2
1
10
102
103
10-1 -40
0
40
80
120
1 -40
0
40
80
120
Illuminance L (lx)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Spectral sensitivity characteristics
100 Ta = 25C 80 80 100
Directivity characteristics
103
tr ICE(L)
VCC = 10 V Ta = 25C
Relative sensitivity S (%)
Relative sensitivity S (%)
102
Rise time tr (s)
60
60
RL = 1 k 10 500 100 1
40
40
20
20
0 200
400
600
800
1 000
1 200
0
30
10
10
30
10-1 -1 10
1
10
102
Wavelength (nm)
Half-power angle ()
Photocurrent ICE(L) (mA)
2
SHE00005BED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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